 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TRW53601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. PACKAGE STYLE FEATURES: * Diffused Ballast Resistors * OmnigoldTM Metalization System * Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG JC 400 mA 50 V 3.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 31 C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO hFE COB PO IMD GP VSWR IC = 10 mA IC = 10 mA TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 20 50 45 3.5 0.25 UNITS V V V V mA --pF W dB dB IC = 1.0 mA IE = 250 A VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 20 V PIN = .100 W IE = 120 mA IC = 100 mA f = 1.0 MHz f = 2.0 GHz 15 120 3.5 .8 -30 8.5 9.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of TRW53601
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |